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データシートサーチシステム |
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データシートサーチシステム |
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BCW66F データシート(PDF) 2 Page - Infineon Technologies AG |
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BCW66F データシート(HTML) 2 Page - Infineon Technologies AG |
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2 / 5 page  BCW65, BCW66 2 Jul-10-2001 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BCW65 BCW66 V(BR)CEO 32 45 - - - - V Collector-base breakdown voltage IC = 10 µA, IB = 0 BCW65 BCW66 V(BR)CBO 60 75 - - - - Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 5 - - Collector cutoff current VCB = 32 V, IE = 0 VCB = 45 V, IE = 0 BCW65 BCW66 ICBO - - - - 20 20 nA Collector cutoff current VCB = 32 V, IE = 0 , TA = 150 °C VCB = 45 V, IE = 0 , TA = 150 °C BCW65 BCW66 ICBO - - - - 20 20 µA Emitter cutoff current VEB = 4 V, IC = 0 IEBO - - 20 nA DC current gain 1) IC = 100 µA, VCE = 10 V hFE-grp.A/F hFE-grp.B/G hFE-grp.C/H hFE 35 50 80 - - - - - - - DC current gain 1) IC = 10 mA, VCE = 1 V hFE-grp.A/F hFE-grp.B/G hFE-grp.C/H hFE 75 110 180 - - - - - - DC current gain 1) IC = 100 mA, VCE = 1 V hFE-grp.A/F hFE-grp.B/G hFE-grp.C/H hFE 100 160 250 160 250 350 250 400 630 1) Pulse test: t ≤ 300µs, D = 2% |
同様の部品番号 - BCW66F |
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同様の説明 - BCW66F |
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