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BCX68-16 データシート(PDF) 1 Page - Infineon Technologies AG |
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BCX68-16 データシート(HTML) 1 Page - Infineon Technologies AG |
1 / 4 page BCX68 Jun-29-2001 1 NPN Silicon AF Transistors For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCX69 (PNP) 2 1 3 VPS05162 2 Type Marking Pin Configuration Package BCX68 BCX68-10 BCX68-16 BCX68-25 CA CB CC CD 1 = B 1 = B 1 = B 1 = B 2 = C 2 = C 2 = C 2 = C 3 = E 3 = E 3 = E 3 = E SOT89 SOT89 SOT89 SOT89 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 20 V Collector-base voltage VCBO 25 Emitter-base voltage VEBO 5 DC collector current IC 1 A Peak collector current ICM 2 Base current IB 100 mA Peak base current IBM 200 Total power dissipation, TS = 130 °C Ptot 1 W Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 20 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance |
同様の部品番号 - BCX68-16 |
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同様の説明 - BCX68-16 |
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