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SI53360 データシート(PDF) 5 Page - Silicon Laboratories |
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SI53360 データシート(HTML) 5 Page - Silicon Laboratories |
5 / 15 page Si53360 Rev. 1.1 5 Table 6. Thermal Conditions Parameter Symbol Test Condition Value Unit Thermal Resistance, Junction to Ambient JA Still air 124.4 °C/W Table 7. Absolute Maximum Ratings Parameter Symbol Test Condition Min Typ Max Unit Storage Temperature TS –55 — 150 C Supply Voltage VDD –0.5 — 3.8 V Input Voltage VIN –0.5 — VDD+ 0.3 V Output Voltage VOUT —— VDD+ 0.3 V ESD Sensitivity HBM HBM, 100 pF, 1.5 kΩ — — 2000 V ESD Sensitivity CDM — — 500 V Peak Soldering Reflow Temperature TPEAK Pb-Free; Solder reflow profile per JEDEC J-STD-020 —— 260 C Maximum Junction Temperature TJ —— 125 C Note: Stresses beyond those listed in this table may cause permanent damage to the device. Functional operation specification compliance is not implied at these conditions. Exposure to maximum rating conditions for extended periods may affect device reliability. |
同様の部品番号 - SI53360 |
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同様の説明 - SI53360 |
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