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CDCVF2310PWR データシート(PDF) 4 Page - Texas Instruments |
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CDCVF2310PWR データシート(HTML) 4 Page - Texas Instruments |
4 / 23 page CDCVF2310 SCAS666D – JUNE 2001 – REVISED OCTOBER 2015 www.ti.com 6.2 ESD Ratings VALUE UNIT Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) 2000 Electrostatic V(ESD) V discharge Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) 1000 (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions See (1) MIN NOM MAX UNIT 2.3 2.5 VDD Supply voltage V 3.3 3.6 VDD = 3 V to 3.6 V 0.8 VIL Low-level input voltage V VDD = 2.3 V to 2.7 V 0.7 VDD = 3 V to 3.6 V 2 VIH High-level input voltage V VDD = 2.3 V to 2.7 V 1.7 VI Input voltage 0 VDD V VDD = 3 V to 3.6 V 12 IOH High-level output current mA VDD = 2.3 V to 2.7 V 6 VDD = 3 V to 3.6 V 12 IOL Low-level output current mA VDD = 2.3 V to 2.7 V 6 TA Operating free-air temperature –40 85 °C (1) Unused inputs must be held high or low to prevent them from floating. 6.4 Thermal Information CDCVF2310 THERMAL METRIC (1) PW (TSSOP) UNIT 24 PINS RθJA Junction-to-ambient thermal resistance 91.7 °C/W RθJC(top) Junction-to-case (top) thermal resistance 31.2 °C/W RθJB Junction-to-board thermal resistance 46.4 °C/W ψJT Junction-to-top characterization parameter 1.5 °C/W ψJB Junction-to-board characterization parameter 45.8 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance n/a °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 6.5 Electrical Characteristics over recommended operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT VIK Input voltage VDD = 3 V II = –18 mA –1.2 V II Input current VI = 0 V or VDD ±5 μA -40°C to 85°C 80 μA CLK = 0 V or VDD , IDD Static device current IO = 0 mA ≤105°C 100 μA CI Input capacitance VDD = 2.3 V to 3.6 V VI = 0 V or VDD 2.5 pF CO Output capacitance VDD = 2.3 V to 3.6 V VI = 0 V or VDD 2.8 pF (1) All typical values are at respective nominal VDD. 4 Submit Documentation Feedback Copyright © 2001–2015, Texas Instruments Incorporated Product Folder Links: CDCVF2310 |
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