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TS12011ITD1022 データシート(PDF) 10 Page - Silicon Laboratories

部品番号 TS12011ITD1022
部品情報  Nanopower Op Amp, Comparator, and Reference
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メーカー  SILABS [Silicon Laboratories]
ホームページ  http://www.silabs.com
Logo SILABS - Silicon Laboratories

TS12011ITD1022 データシート(HTML) 10 Page - Silicon Laboratories

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TS12011/TS12012
Page 10
TS12011/12 Rev. 1.0
change, the comparator stays active and waits for the
crossing, at which point it will latch in its final state.
An internal POR circuit ensures that the latch powers
up in the “comparator active” state if LHDET
is low
when VDD is first applied.
Latch Truth Table – TS12011
LHDET
CMPOUT
initial
state
CMPIN+
to CMPIN-
difference
voltage
CMPOUT
HIGH
X
N/A
Normal
operation
LOW
HIGH
X
HIGH
(latched)
LOW
LOW
negative
LOW
(comparator
active)
LOW
LOW
positive
HIGH
(latched)
X = Don’t Care
Latch Truth Table – TS12012
LHDET
CMPOUT
initial
state
CMPIN+
to CMPIN-
difference
voltage
CMPOUT
HIGH
X
N/A
Normal
operation
LOW
LOW
X
LOW
(latched)
LOW
HIGH
positive
HIGH
(comparator
active)
LOW
HIGH
negative
LOW
(latched)
X = Don’t Care
Reference
The TS12011 and TS12012 on-board 0.58V ±4.5%
reference voltage can source and sink 0.1µA and
0.1µA of current and can drive a capacitive load less
than 50pF and greater than 50nF with a maximum
capacitive load of 250nF. The higher the capacitive
load, the lower the noise on the reference voltage
and the longer the time needed for the reference
voltage to respond and become available on the
REFOUT pin. With a 250nF capacitive load, the
reference voltage will settle to within specifications in
approximately 20ms.
Op Amp
The TS12011 and TS12012 have a unity-gain stable
op-amp with a GBWP of 15kHz, a slew rate of 6V/ms,
and can drive a capacitive load up to 50pF. The
common mode input voltage range extends from VSS
to VDD and the input bias current and offset current
are less than 20nA and 2nA, respectively.
Op-Amp Stability
The TS12011 and TS12012 op-amp is able to drive
up to 50pF of capacitive load and still maintain
stability in a unity-gain configuration with a 15kHz
GBWP and a phase margin of 70 degrees with a
100k
Ω//20pF output load.
Though the TS12011 and TS12012 address low
frequency applications, it is essential to perform good
layout techniques in order to minimize board leakage
and stray capacitance, which is of a concern in low
power, high impedance circuits. For instance, a
10M
Ω resistor coupled with a 1pF stray capacitance
can lead to a pole at approximately 15kHz, which is
the GBWP of the device. If stray capacitance is
unavoidable, a feedback capacitor can be placed in
parallel with the feedback resistor.
APPLICATIONS INFORMATION
Comparator Hysteresis
As a result of circuit noise or unintended parasitic
feedback, many analog comparators often break into
oscillation within their linear region of operation
especially when the applied differential input voltage
approaches 0V (zero volt). Externally-introduced
hysteresis
is
a
well-established
technique
for
stabilizing analog comparator behavior and requires
external components. As shown in Figure 1, adding
comparator hysteresis creates two trip points: VTHR
(for the rising input voltage) and VTHF (for the falling
input voltage). The hysteresis band (VHB) is defined
as the voltage difference between the two trip points.
When a comparator’s input voltages are equal,
hysteresis effectively forces one comparator input to
move quickly past the other input, moving the input
out of the region where oscillation occurs. Figure 1
illustrates the case in which an IN- input is a fixed
voltage and an IN+ is varied. If the input signals were
reversed, the figure would be the same with an
inverted output. To save cost and external pcb area,
an internal ±7.5mV hysteresis circuit was added to
the TS12011 and TS12012.


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