If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Supply Voltage (V

−0.5V to +7.0V

DC Input Diode Current (I

V

−20 mA

V

+20 mA

DC Input Voltage (V

−0.5V to V

DC Output Diode Current (I

V

−20 mA

V

+20 mA

DC Output Voltage (V

−0.5V to V

DC Output Source

or Sink Current (I

DC V

per Output Pin (I

Storage Temperature (T

−65˚C to +150˚C

DC Latchup Source

or Sink Current

Junction Temperature (T

CDIP

175˚C

Recommended Operating

Conditions

Supply Voltage (V

’ACTQ

4.5V to 5.5V

Input Voltage (V

0VtoV

CC

Output Voltage (V

0VtoV

CC

Operating Temperature (T

54ACTQ

−55˚C to +125˚C

Minimum Input Edge Rate

∆V/∆t

’ACTQ Devices

V

V

125 mV/ns

Note 1: Absolute maximum ratings are those values beyond which damage

to the device may occur. The databook specifications should be met, without

exception, to ensure that the system design is reliable over its power supply,

temperature, and output/input loading variables. National does not recom-

Note 2: All commercial packaging is not recommended for applications re-

quiring greater than 2000 temperature cycles from −40˚C to +125˚C.

DC Characteristics for ’ACTQ Family Devices

54ACTQ

Symbol

Parameter

V

CC

T

Units

Conditions

(V)

−55˚C to

+125˚C

Guaranteed

Limits

V

IH

Minimum High Level

4.5

2.0

V

V

Input Voltage

5.5

2.0

or V

V

IL

Maximum Low Level

4.5

0.8

V

V

Input Voltage

5.5

0.8

or V

V

OH

Minimum High Level

4.5

4.4

V

I

Output Voltage

5.5

5.4

(Note 3)

V

4.5

3.70

V

I

5.5

4.70

I

V

OL

Maximum Low Level

4.5

0.1

V

I

Output Voltage

5.5

0.1

(Note 3)

V

4.5

0.50

V

I

5.5

0.50

I

I

IN

Maximum Input Leakage

Current

5.5

µA

V

I

OZ

Maximum TRI-STATE

5.5

µA

V

Leakage Current

V

I

CCT

Maximum

5.5

1.6

mA

V

I

3

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