STF40N65M2 datasheet(3/13 Pages) STMICROELECTRONICS

部品番号	STF40N65M2

部品情報	N-channel 650 V, 0.087 廓 typ., 32 A MDmesh??M2 Power MOSFET in a TO-220FP package

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STF40N65M2

Electrical ratings

DocID027442 Rev 1

3/13

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

V

ID

(1)

Drain current (continuous) at TC = 25 °C

32

A

ID

(1)

Drain current (continuous) at TC= 100 °C

20

A

IDM

(2)

Drain current (pulsed)

128

A

PTOT

Total dissipation at TC = 25 °C

25

W

dv/dt

(3)

Peak diode recovery voltage slope

15

V/ns

dv/dt

(4)

MOSFET dv/dt ruggedness

50

V/ns

VISO

Insulation withstand voltage (RMS) from all three leads to

external heat sink (t = 1 s; TC = 25 °C)

2500

V

Tstg

Storage temperature

- 55 to

150

°C

Tj

Max. operating junction temperature

150

Notes:

(1)

Limited by maximum junction temperature.

(2)

Pulse width limited by safe operating area.

(3)

ISD

≤ 32 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V

(4)

VDS

≤ 520 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

3.13

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.50

°C/W

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetetive or not repetetive (pulse width

limited by Tjmax)

3

A

EAS

Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR,

VDD = 50 V)

820

mJ

同様の部品番号 - STF40N65M2

メーカー	部品番号	データシート	部品情報
STMicroelectronics	STF40N60M2	1Mb / 22P	N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages
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同様の説明 - STF40N65M2

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STMicroelectronics	STF9HN65M2	444Kb / 13P	N-channel 600 V, 0.71 廓 typ., 5.5 A MDmesh??M2 Power MOSFET in a TO-220FP package April 2015 Rev 2
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	STF11N60M2-EP	305Kb / 14P	N-channel 600 V, 0.550 typ., 7.5 A MDmesh™ M2 EP Power MOSFET in a TO-220FP package April 2018 Rev 4
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