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STB27NM60ND データシート(PDF) 4 Page - STMicroelectronics

部品番号 STB27NM60ND
部品情報  Low input capacitance and gate charge
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB27NM60ND データシート(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STB27NM60ND, STW27NM60ND
4/19
DocID15406 Rev 4
2
Electrical characteristics
(TCASE=25 °C unless otherwise specified).
Table 5. On/off states
Symbol
Parameter
Test conditions
Value
Unit
Min.
Typ.
Max.
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
600
V
dv/dt(1)
1.
Characteristic value at turn off on inductive load.
Drain source voltage slope
VDD= 480 V, ID= 21 A,
VGS= 10 V
48
V/ns
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 600 V
1
µA
VDS = 600 V @TC= 125 °C
100
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
3
4
5
V
RDS(on)
Static drain-source
on- resistance
VGS = 10 V, ID = 10.5 A
0.13
0.16
Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
Forward transconductance
VDS = 15 V, ID = 10.5 A
-
17
-
S
Ciss
Input capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
-
2400
-
pF
Coss
Output capacitance
-
150
-
pF
Crss
Reverse transfer
capacitance
-15
-
pF
Coss
eq.
(2)
Equivalent output
capacitance
VGS = 0, VDS = 0 to 480 V
-
320
-
pF
td(on)
Turn-on delay time
VDD = 300 V, ID = 10.5 A
RG =4.7 Ω VGS = 10 V
(see Figure 21),
(see Figure 16)
-60
-
ns
tr
Rise time
-
30
-
ns
td(off)
Turn-off delay time
-
50
-
ns
tf
Fall time
-
40
-
ns


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