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STB27NM60ND データシート(PDF) 4 Page - STMicroelectronics |
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STB27NM60ND データシート(HTML) 4 Page - STMicroelectronics |
4 / 19 page Electrical characteristics STB27NM60ND, STW27NM60ND 4/19 DocID15406 Rev 4 2 Electrical characteristics (TCASE=25 °C unless otherwise specified). Table 5. On/off states Symbol Parameter Test conditions Value Unit Min. Typ. Max. V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 600 V dv/dt(1) 1. Characteristic value at turn off on inductive load. Drain source voltage slope VDD= 480 V, ID= 21 A, VGS= 10 V 48 V/ns IDSS Zero gate voltage drain current (VGS = 0) VDS = 600 V 1 µA VDS = 600 V @TC= 125 °C 100 µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 10.5 A 0.13 0.16 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) Forward transconductance VDS = 15 V, ID = 10.5 A - 17 - S Ciss Input capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 2400 - pF Coss Output capacitance - 150 - pF Crss Reverse transfer capacitance -15 - pF Coss eq. (2) Equivalent output capacitance VGS = 0, VDS = 0 to 480 V - 320 - pF td(on) Turn-on delay time VDD = 300 V, ID = 10.5 A RG =4.7 Ω VGS = 10 V (see Figure 21), (see Figure 16) -60 - ns tr Rise time - 30 - ns td(off) Turn-off delay time - 50 - ns tf Fall time - 40 - ns |
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同様の説明 - STB27NM60ND |
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