BUZ60 datasheet(8/9 Pages) INFINEON

部品番号	BUZ60

部品情報	SIPMOS Power Transistor

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メーカー	INFINEON [Infineon Technologies AG]

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8 / 9 page

Semiconductor Group

8

07/96

BUZ 60

Avalanche energy E

AS = ƒ(Tj)

parameter: ID = 5.5 A, VDD = 50 V

R

GS = 25 Ω, L = 18.5 mH

20

40

60

80

100

120

°C

160

T

j

0

40

80

120

160

200

240

280

mJ

340

E

AS

Typ. gate charge

VGS = ƒ(QGate)

parameter: I

D puls = 8 A

0

10

20

30

40

50

nC

65

Q

Gate

0

2

4

6

8

10

12

V

16

V

GS

DS max

V

0,8

DS max

V

0,2

Drain-source breakdown voltage

V(BR)DSS = ƒ(Tj)

-60

-20

20

60

100

°C

160

T

j

360

370

380

390

400

410

420

430

440

450

460

V

480

V

(BR)DSS

同様の部品番号 - BUZ60

メーカー	部品番号	データシート	部品情報
Siemens Semiconductor G...	BUZ60	181Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
Intersil Corporation	BUZ60	41Kb / 5P	5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET October 1998
Siemens Semiconductor G...	BUZ60B	174Kb / 6P	main ratings
Intersil Corporation	BUZ60B	42Kb / 5P	4.5A, 400V, 1.500 Ohm, N-Channel Power MOSFET October 1998
Inchange Semiconductor ...	BUZ60B	66Kb / 2P	SOA is Power Dissipation Limited

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