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STD20P3H6AG データシート(PDF) 4 Page - STMicroelectronics |
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STD20P3H6AG データシート(HTML) 4 Page - STMicroelectronics |
4 / 15 page Electrical characteristics STD20P3H6AG 4/15 DocID028377 Rev 2 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4: Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = -250 µA -30 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = -30 V -1 µA VGS = 0 V, VDS = -30 V, Tcase = 125 °C -10 IGSS Gate-body leakage current VDS = 0 V, VGS = -20 V -100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = -250 µA -2 -4 V RDS(on) Static drain-source on- resistance VGS = -10 V, ID = -10 A 33 50 mΩ Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = -25 V, f = 1 MHz, VGS = 0 V - 635 - pF Coss Output capacitance - 155 - Crss Reverse transfer capacitance - 100 - Qg Total gate charge VDD = -15 V, ID = -20 A, VGS = -10 V (see Figure 14: "Gate charge test circuit") - 12.8 - nC Qgs Gate-source charge - 4.4 - Qgd Gate-drain charge - 3.4 - Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = -15 V, ID = -10 A RG = 4.7 Ω, VGS = - 10 V (see Figure 13: "Switching times test circuit for resistive load" ) - 9.4 - ns tr Rise time - 28.2 - td(off) Turn-off delay time - 15.8 - tf Fall time - 6.25 - |
同様の部品番号 - STD20P3H6AG |
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同様の説明 - STD20P3H6AG |
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