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STP12N50M2 データシート(PDF) 3 Page - STMicroelectronics |
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STP12N50M2 データシート(HTML) 3 Page - STMicroelectronics |
3 / 13 page DocID026516 Rev 1 3/13 STP12N50M2 Electrical ratings 13 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V GS Gate-source voltage ± 25 V I D Drain current (continuous) at T C = 25 °C 10 A I D Drain current (continuous) at T C = 100 °C 7 A I DM (1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 40 A P TOT Total dissipation at T C = 25 °C 85 W dv/dt (2) 2. I SD ≤ 10 A, di/dt ≤ 400 A/μs; V DS peak < V (BR)DSS , V DD =400 V. Peak diode recovery voltage slope 15 V/ns dv/dt (3) 3. V DS ≤ 400 V MOSFET dv/dt ruggedness 50 V/ns T stg Storage temperature - 55 to 150 °C T j Max. operating junction temperature Table 3. Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case max 1.47 °C/W R thj-amb Thermal resistance junction-amb max 62.5 °C/W Table 4. Avalanche characteristics Symbol Parameter Value Unit I AR Avalanche current, repetitive or not repetitive (pulse width limited by T jmax ) 3.5 A E AS Single pulse avalanche energy (starting T j =25°C, I D = I AR ; V DD =50) 204 mJ |
同様の部品番号 - STP12N50M2 |
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同様の説明 - STP12N50M2 |
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