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STPS10H100C データシート(PDF) 2 Page - STMicroelectronics |
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STPS10H100C データシート(HTML) 2 Page - STMicroelectronics |
2 / 10 page Characteristics STPS10H100C 2/10 DocID024444 Rev 1 1 Characteristics When diodes 1 and 2 are used simultaneously: T j(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V IF(RMS) Forward rms current 10 A IF(AV) Average forward current = 0.5 TO-220AB, D2PAK Tc = 165 °C Per diode Per device 5 10 A TO-220FPAB Tc = 160 °C IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 180 A IRRM Repetitive peak reverse current tp = 2 µs square F= 1 kHz 1 A PARM Repetitive peak avalanche power tp = 10 µs Tj = 125 °C 515 W Tstg Storage temperature range -65 to + 175 °C Tj Maximum operating junction temperature (1) 175 °C dV/dt Critical rate of rise of reverse voltage 10000 V/µs 1. condition to avoid thermal runaway for a diode on its own heatsink dPtot dTj --------------- 1 Rth j a – -------------------------- Table 3. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case TO-220AB, D2PAK Per diode 2.2 °C/W Total 1.3 Rth(c) Coupling 0.3 Rth(j-c) Junction to case TO-220FPAB Per diode 4.5 °C/W Total 3.5 Rth(c) Coupling 2.5 Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) Reverse leakage current Tj = 25 °C VR = VRRM 3.5 A Tj = 125 °C 1.3 4.5 mA VF (2) Forward voltage drop Tj = 25 °C IF = 5 A 0.73 V Tj = 125 °C IF = 5 A 0.57 0.61 Tj = 25 °C IF = 10 A 0.85 Tj = 125 °C IF = 10 A 0.66 0.71 1. Pulse test: tp = 5 ms, < 2% 2. Pulse test: tp = 380 µs, < 2% |
同様の部品番号 - STPS10H100C |
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同様の説明 - STPS10H100C |
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