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TPD3E001DRYRG4 データシート(PDF) 4 Page - Texas Instruments |
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TPD3E001DRYRG4 データシート(HTML) 4 Page - Texas Instruments |
4 / 22 page TPD3E001 SLLS683F – JULY 2006 – REVISED OCTOBER 2015 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings (1) over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT VCC –0.3 7 V VI/O IO voltage tolerance –0.3 VCC + 0.3 V TJ Junction temperature 150 °C Lead temperature (soldering, 10 s) 300 °C Peak pulse power (tp = 8/20 µs) 90 W Peak pulse power (tp = 8/20 µs) 5.5 A Tstg Storage temperature –65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6.2 ESD Ratings VALUE UNIT Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±15000 Charged-device model (CDM), per JEDEC specification JESD22- ±1500 C101(2) V(ESD) Electrostatic discharge V IEC 61000-4-2 Contact Discharge ±8000 IEC 61000-4-2 Air-gap Discharge ±15000 (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VCC Pin 0.9 5.5 Operating Voltage V IOx Pin 0 VCC Operating free-air temperature, TA -40 85 °C 6.4 Thermal Information TPD3E001 THERMAL METRIC(1) DRL (SOT) DRS (WSON) DRY (USON) UNIT 5 PINS 6 PINS 6 PINS RθJA Junction-to-ambient thermal resistance 266.3 91.9 374.2 °C/W RθJC(top) Junction-to-case (top) thermal resistance 111.5 106.9 223.4 °C/W RθJB Junction-to-board thermal resistance 84.5 64.8 227.8 °C/W ψJT Junction-to-top characterization parameter 16.0 10.2 52.9 °C/W ψJB Junction-to-board characterization parameter 84.0 64.9 224.8 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A 29.9 87.5 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 4 Submit Documentation Feedback Copyright © 2006–2015, Texas Instruments Incorporated Product Folder Links: TPD3E001 |
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