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STU9HN65M2 データシート(PDF) 3 Page - STMicroelectronics |
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STU9HN65M2 データシート(HTML) 3 Page - STMicroelectronics |
3 / 12 page STU9HN65M2 Electrical ratings DocID027605 Rev 2 3/12 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 5.5 A ID Drain current (continuous) at TC= 100 °C 3.5 A IDM (1) Drain current (pulsed) 22 A PTOT Total dissipation at TC = 25 °C 60 W dv/dt (2) Peak diode recovery voltage slope 15 V/ns dv/dt (3) MOSFET dv/dt ruggedness 50 V/ns Tstg Storage temperature - 55 to 150 °C Tj Max. operating junction temperature 150 Notes: (1) Pulse width limited by safe operating area. (2) ISD ≤ 5.5 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS. (3) VDS ≤ 520 V Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max. 2.08 °C/W Rthj-amb Thermal resistance junction-ambient max. 100 °C/W Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax) 1.0 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 105 mJ |
同様の部品番号 - STU9HN65M2 |
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同様の説明 - STU9HN65M2 |
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