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STB23N80K5 データシート(PDF) 1 Page - STMicroelectronics |
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STB23N80K5 データシート(HTML) 1 Page - STMicroelectronics |
1 / 15 page August 2015 DocID028291 Rev 1 1/15 This is information on a product in full production. www.st.com STB23N80K5 N-channel 800 V, 0.23 Ω typ., 16 A MDmesh™ K5 Power MOSFET in a D²PAK package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STB23N80K5 800 V 0.28 Ω 16 A 190 W Industry’s lowest RDS(on) x area Industry’s best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected Applications Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STB23N80K5 23N80K5 D²PAK Tape and reel 1 3 TAB D2PAK |
同様の部品番号 - STB23N80K5 |
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同様の説明 - STB23N80K5 |
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