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TS420-700H データシート(PDF) 4 Page - Kersemi Electronic Co., Ltd.

部品番号 TS420-700H
部品情報  4A SCRs
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メーカー  KERSEMI [Kersemi Electronic Co., Ltd.]
ホームページ  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

TS420-700H データシート(HTML) 4 Page - Kersemi Electronic Co., Ltd.

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TS420 Series
4/8
Fig. 4: Relative variation of gate trigger current
and holding current versus junction temperature.
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values).
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
Fig. 8: Surge peak on-state current versus
number of cycles.
Fig. 9:
Non-repetitive surge
peak on-state
current
for
a
sinusoidal
pulse
with
width
tp < 10 ms, and corresponding values of I²t.
-40
-20
0
20
40
60
80
100
120
140
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IGT,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 °C]
IGT
IH & IL
Rgk = 1k
Tj(°C)
IH[Rgk] / IH[Rgk = 1k ]
Rgk(k
Ω)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.01
0.10
1.00
10.00
Tj=125°C
VD=0.67xVDRM
dV/dt[Rgk] / dV/dt [Rgk = 220 ]
Rgk(
Ω)
0
2
4
6
8
10
12
14
16
18
20
22
0
2
4
6
8
10
VD = 0.67 x VDRM
Tj = 125 °C
Rgk = 220
dV/dt[Cgk] / dV/dt [Rgk = 220
Ω]
Cgk(nF)
1
10
100
1000
0
5
10
15
20
25
30
35
ITSM(A)
Non repetitiv e
Tj initial = 25 °C
Repetitive
Tcase = 115 °C
Number of cycles
One cycle
tp = 10ms
0.01
0.10
1.00
10.00
1
10
100
300
ITSM(A),I 2t(A2s)
Tj initial = 25 °C
ITSM
I2t
dI/dt
limitattion
tp(ms)
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