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74LVC2G125DCTRE6 データシート(PDF) 4 Page - Texas Instruments |
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74LVC2G125DCTRE6 データシート(HTML) 4 Page - Texas Instruments |
4 / 22 page 4 SN74LVC2G125 SCES204P – APRIL 1999 – REVISED JANUARY 2016 www.ti.com Product Folder Links: SN74LVC2G125 Submit Documentation Feedback Copyright © 1999–2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) The input negative-voltage and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed. (3) The value of VCC is provided in the Recommended Operating Conditions table. 6 Specifications 6.1 Absolute Maximum Ratings See (1) MIN MAX UNIT VCC Supply voltage range –0.5 6.5 V VI Input voltage range(2) –0.5 6.5 V VO Voltage range applied to any output in the high-impedance or power-off state (2) –0.5 6.5 V VO Voltage range applied to any output in the high or low state (2)(3) –0.5 VCC + 0.5 V IIK Input clamp current VI < 0 –50 mA IOK Output clamp current VO < 0 –50 mA IO Continuous output current ±50 mA Continuous current through VCC or GND ±100 mA Tstg Storage temperature range –65 150 °C TJ Junction temperature 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings PARAMETER DEFINITION VALUE UNIT V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) 2000 V Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) 1000 |
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