 |
データシートサーチシステム |
|
|
データシートサーチシステム |
|
IRF9540S データシート(PDF) 7 Page - Kersemi Electronic Co., Ltd. |
|
||||||||||||||||||||||||||||||
IRF9540S データシート(HTML) 7 Page - Kersemi Electronic Co., Ltd. |
|
|
7 / 8 page  Fig. 14 - For P-Channel P.W. Period dI/dt Diode recovery dV/dt Body diode forward drop Body diode forward current Driver gate drive Inductor current D = P.W. Period + - - + Peak Diode Recovery dV/dt Test Circuit • dV/dt controlled by R g • D.U.T. - device under test D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer R g • Compliment N-Channel of D.U.T. for driver V DD • I SD controlled by duty factor “D” Note Note a. V GS = - 5 V for logic level and - 3 V drive devices V GS = - 10 V a D.U.T. l SD waveform D.U.T. V DS waveform V DD Re-applied voltage Ripple ≤ 5 % I SD Reverse recovery current IRF9540S, SiHF9540S 2014-8-28 7 www.kersemi.com |
同様の部品番号 - IRF9540S |
|
同様の説明 - IRF9540S |
|
|
|
リンク URL |
| プライバシーポリシー |
| ALLDATASHEET.JP |
| ALLDATASHEETはお客様のビジネスに役立ちますか？ [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Japanese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
