SPI73N03S2L-08 datasheet(7/8 Pages) INFINEON

部品番号	SPI73N03S2L-08

部品情報	OptiMOS Power-Transistor

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メーカー	INFINEON [Infineon Technologies AG]

ホームページ	http://www.infineon.com

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7 / 8 page

2003-04-24

Page 7

SPI73N03S2L-08

SPP73N03S2L-08,SPB73N03S2L-08

13 Typ. avalanche energy

EAS = f (Tj)

par.: ID=73A, VDD = 25 V, RGS = 25 Ω

25

45

65

85

105

125

145

°C

185

Tj

0

20

40

60

80

100

120

140

mJ

180

14 Typ. gate charge

VGS = f (QGate)

parameter: ID = 36 A pulsed

0

10

20

30

40

nC

55

Q

Gate

0

2

4

6

8

10

12

V

16

SPP73N03S2L-08

0,8 VDS max

DS max

V

0,2

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj)

parameter: ID=10 mA

-60

-20

20

60

100

140

°C

200

T

j

27

28

29

30

31

32

33

34

V

36

SPP73N03S2L-08

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