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SPI80N06S2-08 データシート(PDF) 2 Page - Infineon Technologies AG

部品番号 SPI80N06S2-08
部品情報  OptiMOS Power-Transistor
Download  8 Pages
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メーカー  INFINEON [Infineon Technologies AG]
ホームページ  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPI80N06S2-08 データシート(HTML) 2 Page - Infineon Technologies AG

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2003-05-09
Page 2
SPI80N06S2-08
SPP80N06S2-08,SPB80N06S2-08
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
RthJC
-
0.46
0.7
K/W
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
RthJA
-
-
-
-
62
40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
V(BR)DSS
55
-
-
V
Gate threshold voltage, VGS = VDS
ID=150µA
VGS(th)
2.1
3
4
Zero gate voltage drain current
VDS=55V, VGS=0V, Tj=25°C
VDS=55V, VGS=0V, 125°C,2)
IDSS
-
-
0.01
1
1
100
µA
Gate-source leakage current
VGS=20V, VDS=0V
IGSS
-
1
100
nA
Drain-source on-state resistance
VGS=10V, ID=58A
RDS(on)
-
6.5
8
m
1Current limited by bondwire ; with an R
thJC = 0.7K/W the chip is able to carry ID= 109A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.


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