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SPI80N06S2-08 データシート(PDF) 2 Page - Infineon Technologies AG |
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SPI80N06S2-08 データシート(HTML) 2 Page - Infineon Technologies AG |
2 / 8 page 2003-05-09 Page 2 SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 0.46 0.7 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) RthJA - - - - 62 40 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0V, ID=1mA V(BR)DSS 55 - - V Gate threshold voltage, VGS = VDS ID=150µA VGS(th) 2.1 3 4 Zero gate voltage drain current VDS=55V, VGS=0V, Tj=25°C VDS=55V, VGS=0V, 125°C,2) IDSS - - 0.01 1 1 100 µA Gate-source leakage current VGS=20V, VDS=0V IGSS - 1 100 nA Drain-source on-state resistance VGS=10V, ID=58A RDS(on) - 6.5 8 m Ω 1Current limited by bondwire ; with an R thJC = 0.7K/W the chip is able to carry ID= 109A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. |
同様の部品番号 - SPI80N06S2-08 |
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同様の説明 - SPI80N06S2-08 |
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