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データシートサーチシステム |
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データシートサーチシステム |
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SPA20N60C3 データシート(PDF) 1 Page - Infineon Technologies AG |
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SPA20N60C3 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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2003-10-08 Page 1 SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 Final data Cool MOS™ Power Transistor VDS @ Tjmax 650 V RDS(on) 0.19 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) P-TO262-3-1 P-TO263-3-2 P-TO220-3-31 P-TO220-3-1 P-TO220-3-31 1 2 3 Marking 20N60C3 20N60C3 20N60C3 20N60C3 Type Package Ordering Code SPP20N60C3 P-TO220-3-1 Q67040-S4398 SPB20N60C3 P-TO263-3-2 Q67040-S4397 SPI20N60C3 P-TO262-3-1 Q67040-S4550 SPA20N60C3 P-TO220-3-31 Q67040-S4410 Maximum Ratings Parameter Symbol Value Unit SPA Continuous drain current TC = 25 °C TC = 100 °C ID 20.7 13.1 20.71) 13.11) A Pulsed drain current, tp limited by Tjmax ID puls 62.1 62.1 A Avalanche energy, single pulse ID=10A, VDD=50V EAS 690 690 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=20A, VDD=50V EAR 1 1 Avalanche current, repetitive tAR limited by Tjmax IAR 20 20 A Gate source voltage static VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 208 34.5 W SPP_B SPP_B_I Operating and storage temperature Tj , Tstg -55...+150 °C |
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