BF1101R-215 datasheet(3/15 Pages) NXP

部品番号	BF1101R-215

部品情報	N-channel dual-gate MOS-FETs

Download	15 Pages

Scroll/Zoom	100%

メーカー	NXP [NXP Semiconductors]

ホームページ	http://www.nxp.com

Logo

3 / 15 page

1999 May 14

3

NXP Semiconductors

Product specification

N-channel dual-gate MOS-FETs

BF1101; BF1101R; BF1101WR

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Ts is the temperature of the soldering point of the source lead.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage



7V

ID

drain current



30

mA

IG1

gate 1 current

10

mA

IG2

gate 2 current

10

mA

Ptot

total power dissipation

Ts  110 C; note 1



200

mW

Tstg

storage temperature

65

+150

C

Tj

operating junction temperature



+150

C

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point

200

K/W

Fig.4 Power derating curve.

handbook, halfpage

0

50

100

200

250

0

200

MGL615

150

100

50

Ptot

(mW)

Ts (°C)

同様の部品番号 - BF1101R-215

メーカー	部品番号	データシート	部品情報
NXP Semiconductors	BF1101R	128Kb / 16P	N-channel dual-gate MOS-FETs 1999 May 14

More results

同様の説明 - BF1101R-215

メーカー	部品番号	データシート	部品情報
Quanzhou Jinmei Electro...	BF1105_2015	125Kb / 16P	N-channel dual-gate MOS-FETs
Quanzhou Jinmei Electro...	BF1109_2015	120Kb / 16P	N-channel dual-gate MOS-FETs
NXP Semiconductors	BF904	303Kb / 14P	N-channel dual gate MOS-FETs Rev. 06-13 November 2007
Quanzhou Jinmei Electro...	BF1212_2015	136Kb / 15P	N-channel dual-gate MOS-FETs
	BF1109	120Kb / 16P	N-channel dual-gate MOS-FETs
	BF1211	119Kb / 15P	N-channel dual-gate MOS-FETs
NXP Semiconductors	BF904	111Kb / 16P	N-channel dual gate MOS-FETs 1999 May 17
NXP Semiconductors	BF904A	114Kb / 16P	N-channel dual gate MOS-FETs 1999 May 14
Quanzhou Jinmei Electro...	BF1211_2015	119Kb / 15P	N-channel dual-gate MOS-FETs
NXP Semiconductors	BF904	309Kb / 14P	N-channel dual gate MOS-FETs Rev. 06-13 November 2007