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CA19-1 データシート(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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CA19-1 データシート(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 3 page Cascadable Amplifier 10 to 1000 MHz Rev. V3 A19-1 / SMA19-1 1 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 1 Electrical Specifications: Z0 = 50, VCC = +15 VDC Parameter Typical Guaranteed Units 25ºC 0º to 50ºC -54º to +85ºC* Frequency MHz 10-1100 10-1000 10-1000 Small Signal Gain (min) dB 11.5 10.5 10.0 Gain Flatness (max) dB ±0.2 ±0.6 ±0.8 Reverse Isolation dB 16 Noise Figure (max) dB 5.5 6.5 7.0 Power Output @ 1 dB comp. (min) dBm 22.5 20.5 20.0 IP3 dBm +35 IP2 dBm +51 Second Order Harmonic IP dBm +58 VSWR Input / Output (max) 1.5:1 / 1.5:1 1.7:1 / 1.7:1 2.0:1 / 2.3:1 DC Current @ 15 Volts (max) mA 90 94 99 Features HIGH OUTPUT POWER: +22.5 dBm (TYP.) HIGH THIRD ORDER I.P.: +35 dBm (TYP.) MEDIUM NOISE FIGURE: 6.0 dB (TYP.) Description The A19-1 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays impressive performance over a broadband frequency range. An active DC biasing network is used for temperature- stable performance, in addition to an RF Choke, used for power supply decoupling. Both TO-8 and Surface Mount packages are hermetically sealed, and MIL-STD-883 environmental screening is available . Product Image Ordering Information Part Number Package A19-1 TO-8 SMA19-1 Surface Mount CA19-1 SMA Connectorized ** Absolute Maximum Ratings Parameter Absolute Maximum Storage Temperature -62ºC to +125ºC Case Temperature +125ºC DC Voltage +17 V Continuous Input Power +13 dBm Short Term Input power (1 minute max.) 100 mW Peak Power (3 µsec max.) 0.5 W “S” Series Burn-In Temperature (case) +125ºC Thermal Data: VCC = +15 VDC Parameter Rating Thermal Resistance θjc 100ºC/W Transistor Power Dissipation Pd 0.907 W Junction Temperature Rise Above Case Tjc +91ºC * Over temperature performance limits for part number CA19-1, guaranteed from 0oC to +50oC only. ** The connectorized version is not RoHs compliant. |
同様の部品番号 - CA19-1 |
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同様の説明 - CA19-1 |
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