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LM3262TME データシート(PDF) 5 Page - Texas Instruments |
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LM3262TME データシート(HTML) 5 Page - Texas Instruments |
5 / 41 page LM3262 www.ti.com SNVS875O – AUGUST 2012 – REVISED DECEMBER 2015 6.5 Electrical Characteristics Unless otherwise noted, all specifications apply to the Typical Application Circuit with: VIN = EN = 3.6 V and BPEN = NC = 0 V. All typical (TYP) limits apply for TA = TJ = 25°C, and all minimum (MIN) and maximum (MAX) apply over the full operating ambient temperature range ( −30°C ≤ TA = TJ ≤ +90°C), unless otherwise specified. (1) (2) (3) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Feedback voltage at minimum VFB, MIN PWM mode, VCON = 0.16 V(4) 0.38 0.4 0.42 V setting Feedback voltage at maximum VFB, MAX PWM mode, VCON = 1.44 V, VIN = 4 V 3.55 3.6 3.65 V setting ISHDN Shutdown supply current EN = SW = VCON = FB = BPEN = NC =0 V(5) 0.1 1 µA PWM mode, No switching IQ_PWM PWM mode quiescent current 650 795 µA VCON = 0.13 V, FB = 1 V(6) EN = VIN, BPEN = NC = 0V, SW = tri state IQ_SLEEP Low-power sleep mode 25 µA VCON < 0.8 V, FB = 2.05 V(7) ECO mode, No switching IQ_ECO ECO mode quiescent current 60 µA VCON = 0.8 V, FB = 2.05 V(6) ILIM,P PFET switch peak current limit See(8) 1300 1450 1600 mA BPFET switch peak current ILIM, BP VFB = VIN – 1 V 310 400 mA limit ƒOSC Internal oscillator frequency 5.7 6 6.3 MHz EN, BPEN logic high input VIH 1.2 V threshold EN, BPEN logic low input VIL 0.4 V threshold Gain VCON to VOUT gain 0.16 V ≤ VCON ≤ 1.44 V(9) 2.5 V/V IVCON VCON pin leakage current VCON = 1 V –1 1 µA Auto bypass detection VCON = 1.2 V (VOUT-SET = 3 V) VBP, NEG 165 200 235 mV negative threshold VIN = 3.2 V, RL = 6 Ω (IOUT = 500 mA) (10) Auto bypass detection positive VCON = 1.2 V (VOUT-SET = 3 V) VBP, NEG 215 250 285 mV threshold VIN = 3.25 V, RL = 6 Ω (IOUT = 500 mA) (11) IBP, SLEW BPEN = High, Forced bypass 1600 mA (1) All voltages are with respect to the potential at the GND pins. (2) Minimum and maximum limits are specified by design, test, or statistical analysis. (3) The parameters in the electrical characteristics table are tested under open loop conditions at VIN = 3.6 V unless otherwise specified. For performance over the input voltage range and closed-loop results, refer to Typical Characteristics. (4) All 0.4-V VOUT specifications are at steady-state only. (5) Shutdown current includes leakage current of PFET. (6) Iq specified here is when the device is not switching. For operating input current at no load, refer to Typical Characteristics. (7) FB has 200 k Ω to SGND. (8) Current limit is built-in, fixed, and not adjustable. (9) Care should be taken to keep the VCON pin voltage less than the VIN pin voltage as this can place the device into a manufacturing test mode. (10) Entering bypass mode, VIN is compared to the programmed output voltage (2.5 × VCON). When VIN − (2.5 × VCON) falls below VBP,NEG longer than TBP,NEG, the bypass FET turns on, and the switching FET turns on. (11) Bypass mode is exited when VIN − (2.5 × VCON) exceeds VBP,POS longer than TBP,POS, and PWM mode resumes. The hysteresis for the bypass detection threshold VBP,POS − VBP,NEG is always positive and is approximately 50 mV. Copyright © 2012–2015, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: LM3262 |
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