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CDBFR0130R-HF データシート(PDF) 1 Page - Comchip Technology |
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CDBFR0130R-HF データシート(HTML) 1 Page - Comchip Technology |
1 / 4 page CDBFR0130R-HF SMD Schottky Barrier Diode Page 1 REV:A Comchip Technology CO., LTD. A mA V V 1 100 30 35 IO VR VRRM IFSM 8.3ms single half sine-wave superimposed on rate load(JEDEC method) OC OC +125 +125 -40 TSTG Tj Storage temperature Junction temperature Average forward current Reverse voltage Repetitive peak reverse voltage Forward current,surge peak Parameter Conditions Symbol Min Typ Max Unit O Maximum Rating (at TA=25 C unless otherwise noted) 0.102(2.60) 0.095(2.40) 0.051(1.30) 0.043(1.10) 0.035(0.90) 0.027(0.70) Dimensions in inches and (millimeter) 0.020(0.50) Typ. 0.040(1.00) Typ. uA V 0.5 0.45 IR VF Reverse current Forward voltage Parameter Conditions Symbol Min Typ Max Unit VR = 10 V IF = 10 mA O Electrical Characteristics (at TA=25 C unless otherwise noted) QW-G1055 1005/SOD-323F Features -Low reverse current. -Designed for mounting on small surface. -Extremely thin / leadless package. -Majority carrier conduction. Mechanical data -Case: 1005/SOD-323F standard package, molded plastic. -Terminals: Gold plated, solderable per MIL-STD-750,method 2026. -Marking code: cathode band & BQ -Mounting position: Any -Weight: 0.006 gram(approx.). Io = 100 mA RoHS Device Halogen Free VR = 30 Volts |
同様の部品番号 - CDBFR0130R-HF |
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同様の説明 - CDBFR0130R-HF |
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