SD103BWS datasheet(2/3 Pages) CHENDA

部品番号	SD103BWS

部品情報	Schottky Barrier Diode

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メーカー	CHENDA [Microdiode Electronics (Jiangsu) Co.,Ltd.]

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Schottky Barrier Diode

SD103AWS/SD103BWS/SD103CWS

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Reverse Breakdown Voltage SD103AWS

SD103BWS

SD103CWS

V(BR)R

40

30

20

V

IR=10

μA

IR=10

μA

IR=10

μA

Forward voltage

VF

0.37

0.60

V

IF=20mA

IF=200mA

Reverse current

SD103AWS

SD103BWS

SD103CWS

IRM

5.0

μA

VR=30V

VR=20V

VR=10V

Junction Capacitance

CJ

50

pF

VR=0,f=1MHz

Reverse Recovery Time

trr

10

ns

IR=IF=200mA

Irr=0.1*IR,RL=100

Ω

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

２０１４－０３　０１版

ｈｔｔｐ：／／ｗｗｗ．ｍｉｃｒｏｄｉｏｄｅ．ｃｏｍ

同様の部品番号 - SD103BWS

メーカー	部品番号	データシート	部品情報
Pan Jit International I...	SD103BWS	56Kb / 3P	SURFACE MOUNT SCHOTTKY BARRIER
Yea Shin Technology Co....	SD103BWS	502Kb / 2P	SCHOTTKY DIODES
PACELEADER INDUSTRIAL	SD103BWS	196Kb / 2P	SURFACE MOUNT SCHOTTKY BARRIER DIODES
DAESAN ELECTRONIC CORP.	SD103BWS	435Kb / 2P	SCHOTTKY BARRIER RECTIFIER
First Components Intern...	SD103BWS	263Kb / 2P	350mA Small Single Surface Mounted Schottky Diode Low Reverse Capacitance

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同様の説明 - SD103BWS

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