Cascadable Amplifier

2000 to 6000 MHz

Rev. V4

A6011 / SMA6011

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Parameter

Units

Typical

Guaranteed

25ºC

0º to 50ºC -54º to +85ºC*

Frequency

GHz

1.5-6.0

2.0-6.0

2.0-6.0

Small Signal Gain (min)

dB

14.8

13.5

12.5

Gain Flatness (max)

dB

±0.6

±0.9

±1.1

Reverse Isolation

dB

16

Noise Figure (max)

dB

1.5

2.5

3.0

Power Output

@ 1 dB comp. (min)

dBm

18.0

16.5

16.0

IP3

dBm

+30

IP2

dBm

+45

Second Order Harmonic IP

dBm

+50

VSWR Input / Output (max)

1.9:1 / 1.9:1

2.1:1 / 2.1:1

2.2:1 / 2.2:1

DC Current @ 5 Volts (max)

mA

58

65

70

Features

 LOW NOISE FIGURE: 1.5 dB (TYP.)

 MEDIUM OUTPUT POWER: +18 dBm (TYP.)

 HIGH EFFICIENCY: 58 mA (TYP.) @ +5 Vdc

 PHEMT AMPLIFIER

Description

The A6011 RF amplifier is a discrete hybrid design, which uses

thin film manufacturing processes for accurate performance

and high reliability.

This single stage GaAs FET feedback amplifier design displays

impressive performance characteristics over a broadband

frequency range. An RF choke is used for DC power supply

decoupling.

Both TO-8 and Surface Mount packages are hermetically

sealed, and MIL-STD-883 environmental screening is available

.

Product Image

Ordering Information

Part Number

Package

A6011

TO-8

SMA6011

Surface Mount

CA6011 **

SMA Connectorized

Absolute Maximum Ratings

Parameter

Absolute

Maximum

Storage Temperature

-62ºC to +150ºC

Case Temperature

125ºC

DC Voltage

+7 V

Continuous Input Power

+13 dBm

Short Term Input power

(1 minute max.)

100 mW

Peak Power (3 µsec max.)

0.25 W

“S” Series Burn-In

Temperature (case)

125ºC

Parameter

Rating

47ºC/W

0.2 W

Junction Temperature Rise

+9.4ºC

** The connectorized version is not RoHs compliant.