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TMP303DDRLR データシート(PDF) 4 Page - Texas Instruments |
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TMP303DDRLR データシート(HTML) 4 Page - Texas Instruments |
4 / 24 page 4 TMP303 SBOS486F – JULY 2009 – REVISED FEBRUARY 2016 www.ti.com Product Folder Links: TMP303 Submit Documentation Feedback Copyright © 2009–2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Supply Voltage, VS – GND 3.6 V Input Pins, Voltage SOH, HYSTSET1, HYSTSET0 –0.5 VS +0.5 V Output Pin, Voltage OUT –0.5 VS +0.5 V Output Pin, Current OUT –55 8 mA Operating Temperature 130 °C Junction Temperature, TJ max 150 °C Storage Temperature, Tstg –60 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged-device model (CDM), per JEDEC specification JESD22- C101(2) ±1000 Machine model (MM) ±200 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VS Power Supply Voltage 1.4 3.6 V TA Specified Temperature Range –40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 7.4 Thermal Information THERMAL METRIC(1) TMP303 UNIT DRL (SOT-563) 6 PINS RθJA Junction-to-ambient thermal resistance 168 °C/W RθJC(top) Junction-to-case (top) thermal resistance 2.4 °C/W RθJB Junction-to-board thermal resistance 42.3 °C/W ψJT Junction-to-top characterization parameter 0.9 °C/W ψJB Junction-to-board characterization parameter 42.3 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W |
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