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TS3A227ERVAR データシート(PDF) 4 Page - Texas Instruments |
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TS3A227ERVAR データシート(HTML) 4 Page - Texas Instruments |
4 / 59 page TS3A227E SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 www.ti.com 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range referenced with respect to GND (unless otherwise noted) (1) MIN MAX UNIT Input Voltage VDD –0.3 5 V SDA, SCL, INT, MIC_PRESENT –0.3 VDD + 0.5 V TIP –3.3 VDD + 0.5 V DET_TRIGGER –2.2 VDD + 0.5 V GND_SENSE, RING2, SLEEVE, RING2_SENSE, SLEEVE_SENSE, –0.3 3.6(2) and VDD + V MICP, GNDA 0.5 ON-state switch Combined continuous current through R2GNDFET and SLV GNDFET 500 mA current Continuous current through R2DFET and SLV DFET 50 Continuous current through S1 20 Continuous current through S2 20 Continuous current through S3PR 50 Continuous current through S3PS 50 Continuous current through S3GR 100 Continuous current through S3GS 100 Operating ambient temperature range –40 85 °C Tstg Storage temperature range –65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) This rating is exclusive and the voltage on the pins must not exceed either 3.6 and VDD. E.g. if VDD = 4.5 V the voltage on the pin must not exceed 3.6 V and if VDD is = 2.5 V the voltage on the pin must not exceed 3.0 V. 7.2 ESD Ratings VALUE UNIT Human body model (HBM), ESD stress voltagenew note #1 to the ESD ±2000 V Ratings table and combined MIN MAX column to VALUE (1) (2) V(ESD) Electrostatic discharge Charged device model (CDM), ESD stress voltage(1) (3) ±500 V Contact discharge model (IEC) ESD stress voltage on TIP, ±8000 V DET_TRIGGER, RING2_SENSE, SLEEVE_SENSE, RING2, SLEEVE (1) (1) Electrostatic Discharge (ESD) to measure device sensitivity and immunity to damage caused by assembly line electrostatic discharges into the device (2) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (3) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 4 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E |
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