データシートサーチシステム |
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ES2D-T データシート(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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ES2D-T データシート(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 4 page ES2D-T - ES2J-T CREAT BY ART - Glass passivated junction chip - Ideal for automated placement - Low profile package - Super fast recovery time for high efficiency - Halogen-free according to IEC 61249-2-21 Molding compound, UL flammability classification rating 94V-0 Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test VRRM V VRMS V VDC V IF(AV) A trr ns CJ pF TJ °C TSTG °C Document Number: DS_D0000149 Version: A15 TJ=125°C - 55 to +150 0.95 1.3 10 350 Typical junction capacitance (Note 3) 25 20 Maximum reverse current @ rated VR TJ=25°C Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Maximum instantaneous forward voltage (Note 1) @ 2 A VF 1.7 °C/W Operating junction temperature range Storage temperature range - 55 to +150 Maximum reverse recovery time (Note 2) 35 A Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A V IR μA Typical thermal resistance RθJL RθJA 20 75 Note 1: Pulse test with PW=300μs, 1% duty cycle Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 50 140 280 420 SYMBOL 200 Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 2 ES2J-T ES2G-T MECHANICAL DATA Case: DO-214AA (SMB) Polarity: Indicated by cathode band Weight: 0.09 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) ES2D-T UNIT PARAMETER 2A, 200V - 600V Surface Mount Super Fast Rectifiers FEATURES Moisture sensitivity level: level 1, per J-STD-020 Taiwan Semiconductor - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC DO-214AA (SMB) 200 400 600 400 600 Marking code ES2D ES2G ES2J Maximum repetitive peak reverse voltage |
同様の部品番号 - ES2D-T |
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同様の説明 - ES2D-T |
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