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ST2N5551 データシート(PDF) 1 Page - Nanjing International Group Co |
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ST2N5551 データシート(HTML) 1 Page - Nanjing International Group Co |
1 / 3 page 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors ST 2N5400 and ST 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations. Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Emitter Voltage ST 2N5550 ST 2N5551 VCEO VCEO 140 160 V V Collector Base Voltage ST 2N5550 ST 2N5551 VCBO VCBO 160 180 V V Emitter Base Voltage VEBO 6 V Collector Current IC 600 mA Power Dissipation Ptot 625 1) mW Junction Temperature Tj 150 oC Storage Temperature Range TS - 55 to + 150 oC 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. TO-92 Plastic Package Weight approx. 0.19g |
同様の部品番号 - ST2N5551 |
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同様の説明 - ST2N5551 |
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