BC807-16W datasheet(1/2 Pages) DIOTEC

部品番号	BC807-16W

部品情報	Surface mount Si-Epitaxial PlanarTransistors

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メーカー	DIOTEC [Diotec Semiconductor]

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1) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

4

01.11.2003

12

3

Type

Code

2±0.1

1±0.1

0.3

1.3

BC 807W / BC 808W

General Purpose Transistors

PNP

Surface mount Si-Epitaxial PlanarTransistors

Si-Epitaxial PlanarTransistoren für die Oberflächenmontage

PNP

Power dissipation – Verlustleistung

225 mW

Plastic case

SOT-323

Kunststoffgehäuse

Weight approx. – Gewicht ca.

0.01 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Dimensions / Maße in mm

1 = B

2 = E

3 = C

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Maximum ratings (T

A = 25

/C)

Grenzwerte (T

A = 25

/C)

BC 807W

BC 808W

Collector-Emitter-voltage

B open

- V

CE0

45 V

25 V

Collector-Emitter-voltage

B shorted

- V

CES

50 V

30 V

Collector-Base-voltage

E open

- V

CB0

50 V

30 V

Emitter-Base-voltage

C open

- V

EB0

5 V

Power dissipation – Verlustleistung

P

tot

225 mW 1)

Collector current – Kollektorstrom (DC)

- I

C

500 mA

Peak Coll. current – Kollektor-Spitzenstrom

- I

CM

1000 mA

Peak Base current – Basis-Spitzenstrom

- I

BM

200 mA

Peak Emitter current – Emitter-Spitzenstrom

I

EM

1000 mA

Junction temperature – Sperrschichttemperatur

T

j

150

/C

Storage temperature – Lagerungstemperatur

T

S

- 65…+ 150

/C

Characteristics, T

j = 25

/C

Kennwerte, T

j = 25

/C

Min.

Typ.

Max.

DC current gain – Kollektor-Basis-Stromverhältnis

- V

CE = 1 V, - IC = 100 mA

BC807W

BC808W

h

FE

100

–

600

- V

CE = 1 V, - IC = 500 mA

h

FE

40

–

- V

CE = 1 V, - IC = 100 mA

Group -16W h

FE

100

160

250

Group -25W h

FE

160

250

400

Group -40W h

FE

250

400

600

同様の部品番号 - BC807-16W

メーカー	部品番号	データシート	部品情報
NXP Semiconductors	BC807-16W	61Kb / 8P	PNP general purpose transistor 1999 May 18
Taiwan Semiconductor Co...	BC807-16W	150Kb / 6P	200mW, PNP Small Signal Transistor
Siemens Semiconductor G...	BC807-16W	91Kb / 5P	PNP Silicon AF Transistor (For general AF applications High collector current High current gain)
SUNMATE electronic Co.,...	BC807-16W	612Kb / 3P	PNP SILICON GENERAL PURPOSE TRANSISTORS
Infineon Technologies A...	BC807-16W	47Kb / 5P	PNP Silicon AF Transistors Nov-29-2001

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