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BC849 データシート(PDF) 1 Page - Diotec Semiconductor

部品番号 BC849
部品情報  Surface mount Si-Epitaxial PlanarTransistors
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メーカー  DIOTEC [Diotec Semiconductor]
ホームページ  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BC849 データシート(HTML) 1 Page - Diotec Semiconductor

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1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses t
p = 300
:s, duty cycle # 2% – Gemessen mit Impulsen t
p = 300
:s, Schaltverhältnis # 2%
10
01.11.2003
1.1
2.9 ±0.1
0.4
1
2
3
Type
Code
1.9
BC 846 ... BC 850
General Purpose Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
Power dissipation – Verlustleistung
250 mW
Plastic case
SOT-23
Kunststoffgehäuse
(TO-236)
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B
2 = E
3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A = 25
/C)
Grenzwerte (T
A = 25
/C)
BC 846
BC 847/850
BC 848/849
Collector-Emitter-voltage
B open
V
CE0
65 V
45 V
30 V
Collector-Base-voltage
E open
V
CB0
80 V
50 V
30 V
Emitter-Base-voltage
C open
V
EB0
6 V
5 V
Power dissipation – Verlustleistung
P
tot
250 mW 1)
Collector current – Kollektorstrom (DC)
I
C
100 mA
Peak Collector current – Kollektor-Spitzenstrom
I
CM
200 mA
Peak Base current – Basis-Spitzenstrom
I
BM
200 mA
Peak Emitter current – Emitter-Spitzenstrom
- I
EM
200 mA
Junction temperature – Sperrschichttemperatur
T
j
150
/C
Storage temperature – Lagerungstemperatur
T
S
- 65…+ 150
/C
Characteristics (T
j = 25
/C)
Kennwerte (T
j = 25
/C)
Group A
Group B
Group C
DC current gain – Kollektor-Basis-Stromverhältnis 2)
V
CE = 5 V, IC = 10
:Ah
FE
typ. 90
typ. 150
typ. 270
V
CE = 5 V, IC = 2 mA
h
FE
110...220
200...450
420...800
h-Parameters at V
CE = 5V, IC = 2 mA, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverstärkung
h
fe
typ. 220
typ. 330
typ. 600
Input impedance – Eingangs-Impedanz
h
ie
1.6...4.5 k
S
3.2...8.5 k
S
6...15 k
S
Output admittance – Ausgangs-Leitwert
h
oe
18 < 30
:S
30 < 60
:S
60 < 110
:S
Reverse voltage transfer ratio
Spannungsrückwirkung
h
re
typ.1.5 *10-4
typ. 2 *10-4
typ. 3 *10-4


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