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SBW-5089 データシート(PDF) 1 Page - RF Micro Devices |
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SBW-5089 データシート(HTML) 1 Page - RF Micro Devices |
1 / 7 page Features 1 of 7 Optimum Technology Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Product Description 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. InP HBT LDMOS RF MEMS SBW-5089(Z) DCto8GHz CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER The SBW-5089(Z) is a high performance InGaP/GaAs HBT MMIC Amplifier. A Dar- lington circuit fabricated with InGaP process technology provides broadband RF per- formance up to 8GHz and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in high suppression of inter- modulation products. Operation requires only a single positive voltage supply, 2 DC- blocking capacitors, a bias resistor and an RF choke. Gain Return Loss versus Frequency, ID=80mA (Typ), Tuned Application Circut 0 5 10 15 20 25 0123 4567 8 Frequency (GHz) -25 -20 -15 -10 -5 0 Gain ORL IRL Available in RoHS Compliant and Pb-Free (Z Part Number) 50 Cascadable Gain Block Wideband Flat Gain to 3GHz: +/-1.4dB P1dB= 13.4 at 6GHz Input / Output VSWR <2:3to8GHz Patented Thermal Design Single Voltage Supply Operation Applications Wideband Instrumentation Fiber Optic Driver OC-48 Basestation SAT COM DS150923 Package: SOT-89 SBW-5089(Z) DCto8GHz Cascadable InGaP/GaAs HBT MMIC Amplifier Parameter Specification Unit Condition Min. Typ. Max. Small Signal Gain, PC board and connector losses de-embedded 19.3 20.3 21.3 dB 850MHz 1 6.7 1 7.5 19.0 dB 3000MHz 17.2 dB 4200MHz 14. 2 15 .0 16.5 dB 6000MHz Output Power at 1dB Compression 20.1 dBm 850MHz 18.4 19.4 dBm 1950MHz Output Third Order Intercept Point 35.5 dBm 850MHz 32.0 34.0 dBm 1950MHz Output Power 13.0 dBm 1950MHz, -45dBc ACP IS-95 9 Forward Chan- nels (POUT) Determined by Return Loss 6000 MHz >10dB Noise Figure 3.9 4.4 dB 1950MHz Worst case Input Return Loss 7.0 10.0 dB DCto6000MHz Worst case Output Return Loss 8.0 10.0 dB DCto6000MHz Device Operating Voltage 4.5 4.9 5.3 V Device Operating Current 72.0 80.0 88.0 mA Thermal Resistance 70 °C/W junction to backside Test Conditions: VS=8V ID=80mA Typ. OIP3 Tone Spacing=1MHz TL=25°C Bias Resistance=39 POUT per tone=0dBm ZS=ZL=50 |
同様の部品番号 - SBW-5089 |
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同様の説明 - SBW-5089 |
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