BFN22 datasheet(2/2 Pages) DIOTEC

部品番号	BFN22

部品情報	Surface mount Si-Epitaxial PlanarTransistors

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メーカー	DIOTEC [Diotec Semiconductor]

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1) Tested with pulses t

p = 300

:s, duty cycle # 2% – Gemessen mit Impulsen t

p = 300

:s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

7

01.11.2003

High Voltage Transistors

BFN 22

Characteristics (T

j = 25

/C)

Kennwerte (T

j = 25

/C)

Min.

Typ.

Max.

Base saturation voltage – Basis-Sättigungsspannung 1)

I

C = 10 mA, IB = 1 mA

V

BEsat

–

1 V

DC current gain – Kollektor-Basis-Stromverhältnis 1)

V

CE = 20 V, IC = 25 mA

h

FE

50

–

Gain-Bandwidth Product – Transitfrequenz

V

CE = 10 V, IC = 10 mA, f = 100 MHz

f

T

–

100 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

V

CB = 30 V, IE = ie = 0, f = 1 MHz

C

CB0

–

0.8 pF

–

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

R

thA

420 K/W 2)

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BFN 23

Marking - Stempelung

BFN 22 = HB

同様の部品番号 - BFN22

メーカー	部品番号	データシート	部品情報
Siemens Semiconductor G...	BFN22	127Kb / 4P	NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)

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