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MTB020N03KV8 データシート(PDF) 2 Page - Cystech Electonics Corp. |
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MTB020N03KV8 データシート(HTML) 2 Page - Cystech Electonics Corp. |
2 / 9 page CYStech Electronics Corp. Spec. No. : C143V8 Issued Date : 2016.02.19 Revised Date : 2016.02.22 Page No. : 2/9 MTB020N03KV8 CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 V Continuous Drain Current @ VGS=10V, TC=25 °C 18 Continuous Drain Current @ VGS=10V, TC=100 °C 11.4 Continuous Drain Current @ VGS=10V, TA=25 °C 10 Continuous Drain Current @ VGS=10V, TA=70 °C ID 8 Pulsed Drain Current *1 IDM 72 Single Pulse Avalanche Current IAS 18 A Single Pulse Avalanche Current @ L=0.1mH, VGS=10V, VDD=15V *2 EAS 16.2 mJ Total Power Dissipation @TC=25℃ 8 Total Power Dissipation @TA=25℃ PD 2.5 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C Note : *1 . Pulse width limited by maximum junction temperature *2. 100% tested by conditions of L=0.1mH, IAS=10A, VGS=10V, VDD=15V Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 16 Thermal Resistance, Junction-to-ambient, max RθJA 50 * °C/W * Surface mounted on a 1 in² pad of 2oz copper. Electrical Characteristics (Tj=25 °C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 30 - - V VGS=0V, ID=250μA ΔBVDSS/ΔTj - 0.02 - V/℃ Reference to 25 , I ℃ D =1mA VGS(th) 1 - 2.5 V VDS=VGS, ID=250μA IGSS - - ±10 VGS=±16V, VDS=0V - - 1 VDS=30V, VGS=0V IDSS - - 25 μA VDS=30V, VGS=0V, Tj=125℃ - 12.4 16 ID=10A, VGS=10V *RDS(ON) - 16.8 24 m Ω ID=8A, VGS=4.5V *GFS - 10 - S VDS=5V, ID=10A Dynamic Ciss - 437 - Coss - 62 - Crss - 49 - pF VDS=25V, VGS=0V, f=1MHz td(ON) - 5.8 - tr - 18.6 - td(OFF) - 33.8 - tf - 11.8 - ns VDS=15V, ID=1A, VGS=10V, RG=6Ω |
同様の部品番号 - MTB020N03KV8 |
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同様の説明 - MTB020N03KV8 |
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