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MTB020N03KV8 データシート(PDF) 2 Page - Cystech Electonics Corp.

部品番号 MTB020N03KV8
部品情報  N -Channel Enhancement Mode Power MOSFET
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メーカー  CYSTEKEC [Cystech Electonics Corp.]
ホームページ  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB020N03KV8 データシート(HTML) 2 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C143V8
Issued Date : 2016.02.19
Revised Date : 2016.02.22
Page No. : 2/9
MTB020N03KV8
CYStek Product Specification
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±
20
V
Continuous Drain Current @ VGS=10V, TC=25
°C
18
Continuous Drain Current @ VGS=10V, TC=100
°C
11.4
Continuous Drain Current @ VGS=10V, TA=25
°C
10
Continuous Drain Current @ VGS=10V, TA=70
°C
ID
8
Pulsed Drain Current *1
IDM
72
Single Pulse Avalanche Current
IAS
18
A
Single Pulse Avalanche Current @ L=0.1mH, VGS=10V, VDD=15V *2
EAS
16.2
mJ
Total Power Dissipation @TC=25℃
8
Total Power Dissipation @TA=25℃
PD
2.5
W
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
°C
Note : *1
. Pulse width limited by maximum junction temperature
*2. 100% tested by conditions of L=0.1mH, IAS=10A, VGS=10V, VDD=15V
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
RθJC
16
Thermal Resistance, Junction-to-ambient, max
RθJA
50 *
°C/W
* Surface mounted on a 1 in² pad of 2oz copper.
Electrical Characteristics
(Tj=25
°C, unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
30
-
-
V
VGS=0V, ID=250μA
ΔBVDSS/ΔTj
-
0.02
-
V/℃
Reference to 25 , I
D
=1mA
VGS(th)
1
-
2.5
V
VDS=VGS, ID=250μA
IGSS
-
-
±10
VGS=±16V, VDS=0V
-
-
1
VDS=30V, VGS=0V
IDSS
-
-
25
μA
VDS=30V, VGS=0V, Tj=125℃
-
12.4
16
ID=10A, VGS=10V
*RDS(ON)
-
16.8
24
m
Ω
ID=8A, VGS=4.5V
*GFS
-
10
-
S
VDS=5V, ID=10A
Dynamic
Ciss
-
437
-
Coss
-
62
-
Crss
-
49
-
pF
VDS=25V, VGS=0V, f=1MHz
td(ON)
-
5.8
-
tr
-
18.6
-
td(OFF)
-
33.8
-
tf
-
11.8
-
ns
VDS=15V, ID=1A, VGS=10V, RG=6Ω


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