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IRLBA3803 データシート(PDF) 2 Page - International Rectifier |
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IRLBA3803 データシート(HTML) 2 Page - International Rectifier |
2 / 8 page IRLBA3803 2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) Q ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 71A, VGS = 0V T trr Reverse Recovery Time ––– 120 180 ns TJ = 25°C, IF = 71A Qrr Reverse Recovery Charge ––– 450 680 nC di/dt = 100A/µs TU ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Q Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) S I SD ≤ 71A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Notes: R V DD = 15V, starting TJ = 25°C, L = 180µH RG = 25Ω, IAS = 71A. (See Figure 12) T Pulse width ≤ 300µs; duty cycle ≤ 2%. U Uses IRL3803 data and test conditions. Source-Drain Ratings and Characteristics A 179 V 720 S D G V Calculated continuous current based on maximum allowable junction temperature;for recommended current-handling of the package refer to Design Tip # 93-4 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA U ––– ––– 0.005 VGS = 10V, ID = 71A T ––– ––– 0.009 VGS = 4.5V, ID = 59A T VGS(th) Gate Threshold Voltage 1.0 ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance 55 ––– ––– S VDS = 25V, ID = 71A U ––– ––– 25 µA VDS = 30V, VGS = 0V ––– ––– 250 VDS = 24V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -16V Qg Total Gate Charge ––– ––– 140 ID = 71A Qgs Gate-to-Source Charge ––– ––– 41 nC VDS = 24V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 78 VGS = 4.5V, See Fig. 6 and 13 TU td(on) Turn-On Delay Time ––– 14 ––– VDD = 15V tr Rise Time ––– 230 ––– ID = 71A td(off) Turn-Off Delay Time ––– 29 ––– RG = 1.3Ω tf Fall Time ––– 35 ––– RD = 0.20Ω, See Fig. 10 TU Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 5000 ––– VGS = 0V Coss Output Capacitance ––– 1800 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 880 ––– ƒ = 1.0MHz, See Fig. 5 U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) nH IGSS S D G LS Internal Source Inductance ––– 5.0 ––– RDS(on) Static Drain-to-Source On-Resistance LD Internal Drain Inductance ––– 2.0 ––– IDSS Drain-to-Source Leakage Current Ω |
同様の部品番号 - IRLBA3803 |
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同様の説明 - IRLBA3803 |
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