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IRLBA3803 データシート(PDF) 2 Page - International Rectifier

部品番号 IRLBA3803
部品情報  HEXFET Power MOSFET
Download  8 Pages
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メーカー  IRF [International Rectifier]
ホームページ  http://www.irf.com
Logo IRF - International Rectifier

IRLBA3803 データシート(HTML) 2 Page - International Rectifier

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IRLBA3803
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
Q
–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 71A, VGS = 0V
T
trr
Reverse Recovery Time
–––
120
180
ns
TJ = 25°C, IF = 71A
Qrr
Reverse Recovery Charge
–––
450
680
nC
di/dt = 100A/µs
TU
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Q Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
S I
SD ≤ 71A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
R V
DD = 15V, starting TJ = 25°C, L = 180µH
RG = 25Ω, IAS = 71A. (See Figure 12)
T Pulse width ≤ 300µs; duty cycle ≤ 2%.
U Uses IRL3803 data and test conditions.
Source-Drain Ratings and Characteristics
A
179
V
720
S
D
G
V Calculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.052 –––
V/°C
Reference to 25°C, ID = 1mA
U
–––
––– 0.005
VGS = 10V, ID = 71A
T
–––
––– 0.009
VGS = 4.5V, ID = 59A
T
VGS(th)
Gate Threshold Voltage
1.0
–––
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
55
–––
–––
S
VDS = 25V, ID = 71A
U
–––
–––
25
µA
VDS = 30V, VGS = 0V
–––
–––
250
VDS = 24V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 16V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -16V
Qg
Total Gate Charge
–––
–––
140
ID = 71A
Qgs
Gate-to-Source Charge
–––
–––
41
nC
VDS = 24V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
78
VGS = 4.5V, See Fig. 6 and 13
TU
td(on)
Turn-On Delay Time
–––
14
–––
VDD = 15V
tr
Rise Time
–––
230
–––
ID = 71A
td(off)
Turn-Off Delay Time
–––
29
–––
RG = 1.3Ω
tf
Fall Time
–––
35
–––
RD = 0.20Ω, See Fig. 10
TU
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
5000 –––
VGS = 0V
Coss
Output Capacitance
–––
1800 –––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
880
–––
ƒ = 1.0MHz, See Fig. 5
U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
nH
IGSS
S
D
G
LS
Internal Source Inductance
–––
5.0
–––
RDS(on)
Static Drain-to-Source On-Resistance
LD
Internal Drain Inductance
–––
2.0
–––
IDSS
Drain-to-Source Leakage Current


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