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MMBTH10LT1G データシート(PDF) 2 Page - ON Semiconductor |
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MMBTH10LT1G データシート(HTML) 2 Page - ON Semiconductor |
2 / 6 page MMBTH10LT1, MMBTH10−4LT1 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 25 − − Vdc Collector−Base Breakdown Voltage (IC = 100 µAdc, IE = 0) V(BR)CBO 30 − − Vdc Emitter−Base Breakdown Voltage (IE = 10 µAdc, IC = 0) V(BR)EBO 3.0 − − Vdc Collector Cutoff Current (VCB = 25 Vdc, IE = 0) ICBO − − 100 nAdc Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) IEBO − − 100 nAdc ON CHARACTERISTICS DC Current Gain (IC = 4.0 mAdc, VCE = 10 Vdc) MMBTH10LT1 MMBTH10−4LT1 hFE 60 120 − − − 240 − Collector−Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 0.4 mAdc) VCE(sat) − − 0.5 Vdc Base−Emitter On Voltage (IC = 4.0 mAdc, VCE = 10 Vdc) VBE − − 0.95 Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) MMBTH10LT1 MMBTH10−4LT1 fT 650 800 − − − − MHz Collector−Base Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) Ccb − − 0.7 pF Common−Base Feedback Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) Crb − − 0.65 pF Collector Base Time Constant (IC= 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz) rb ′Cc − − 9.0 ps |
同様の部品番号 - MMBTH10LT1G |
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同様の説明 - MMBTH10LT1G |
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