TSF8N65C datasheet(4/6 Pages) THINKISEMI

部品番号	TSF8N65C

部品情報	7.5A,650V Insulated N-Channel Type Power MOSFETs

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メーカー	THINKISEMI [Thinki Semiconductor Co., Ltd.]

ホームページ	http://www.thinkisemi.com

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4 / 6 page

25

50

75

100

125

150

0

2

4

6

8

T

C' Case Temperature [

oC]

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-2

10

-1

10

0

N o te s :

※

1 . Z

θ JC( t) = 0. 88

/W M a x.

℃

2 . D u ty F a c to r, D = t

1 /t2

3 . T

JM - T C = P DM * Z θ JC(t)

single pu ls e

D= 0 .5

0.02

0.2

0.0 5

0.1

0.01

t

1 , S q uar e W a v e P u ls e D u r a t ion [ s ec ]

10

0

10

1

10

2

10

3

10

-2

10

-1

10

0

10

1

10

2

DC

10 ms

1 ms

100 µs

Operation in This Area

is Limited by R

DS(on)

Notes :

※

1. T

C = 25

oC

2. T

J = 150

oC

3. Single Pulse

V

DS, Drain-Source Voltage [V]

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Notes :

※

1. V

GS = 10 V

2. I

D = 3.7 A

T

J, Junction Temperature [

oC]

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

Notes :

※

1. V

GS = 0 V

2. I

D = 250 µ A

T

J, Junction Temperature [

oC]

Fig 9. Maximum Safe Operating Area

Fig 10. Maximum Drain Current

vs. Case Temperature

Fig 7. Breakdown Voltage Variation

vs. Junction Temperature

Fig 8. On-Resistance Variation

vs. Junction Temperature

Fig 11. Transient Thermal Response Curve

®

TSF8N65C

http://www.thinkisemi.com/

Page 4/6

Rev.05

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