データシートサーチシステム |
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ES1G データシート(PDF) 2 Page - Diotec Semiconductor |
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ES1G データシート(HTML) 2 Page - Diotec Semiconductor |
2 / 2 page ES1A ... ES1J Characteristics Kennwerte Type Typ Reverse recovery time Sperrverzugszeit t rr [ns] 1 ) Forward voltage Durchlass-Spannung V F [V] at / bei I F [A] ES1A...ES1D < 15 < 0.92 1 ES1F...ES1G < 25 < 1.3 1 ES1J < 35 < 1.7 1 Leakage current Sperrstrom Tj = 25°C Tj = 100°C VR = VRRM VR = VRRM IR IR < 5 µA < 100 µA Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 I F = 0.5 A through/über IR = 1 A to/auf IR = 0.25 A 2 http://www.diotec.com/ © Diotec Semiconductor AG 120 100 80 60 40 20 0 I FAV [%] [°C] T A 150 100 50 0 Rated forward current versus ambient temperature ) Zul. Richtstrom in Abh. von der Umgebungstemp. ) 1 1 [A] I F Forward characteristics (typical values) Durchlasskennlinien (typische Werte) [V] V F 10 1 0.1 10 10 -2 -3 ES1A...D T = 25°C j ES1F...G ES1J 10 1 10 10 10 -1 -2 -3 [µA] I R 0 V RRM 40 60 100 [%] Typ. instantaneous leakage current vs. rev. voltage Typ. Sperrstrom (Augenblickswert) ü. Sperrspannung T = 25°C j T = 125°C j T = 85°C j [pF] [V] C j V R T = 25°C f = 1.0 MHz j Junction capacitance vs. reverse voltage (typical) Sperrschichtkapazität in Abh. v.d. Sperrspg. (typ.) |
同様の部品番号 - ES1G |
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同様の説明 - ES1G |
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