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TLP558 データシート(PDF) 2 Page - Toshiba Semiconductor

部品番号 TLP558
部品情報  Isolated Bus Driver High Speed Line Receiver Microprocessor System Interfaces MOS FET Gate Driver Transistor Inverter
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP558 データシート(HTML) 2 Page - Toshiba Semiconductor

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TLP558
2002-09-25
2
Maximum Ratings
(no derating required up to 85°C unless otherwise noted)
Charactersitic
Symbol
Rating
Unit
Forward current
IF
10
mA
Peak transient forward current
(Note 1)
IFPT
1
A
Reverse voltage
VR
5
V
Output current
IO
40 /
-25
mA
Peak output current
(Note 2)
IOP
80 /
-50
mA
Output voltage
VO
-0.5~20
V
Supply voltage
VCC
-0.5~20
V
Three state enabel voltage
VE
-0.5~20
V
Output power dissipation
(Note 3)
PO
100
mW
Total package power dissipation
(Note 4)
PT
200
mW
Operating temperature range
Topr
-40~85
°C
Storage temperature range
Tstg
-55~125
°C
Lead solder temperature(10s)**
Tsol
260
°C
Isolation voltage(AC, 1min., R.H.≤ 60%, Ta=25°C)
(Note 5)
BVS
2500
Vrms
(Note 1) Pulse width ≤ 1µs, 300pps.
(Note 2) Pulse width ≤ 5µs, duty ratio ≤ 0.025.
(Note 3) Derate 1.8mW / °C above 70°C ambient temperature.
(Note 4) Derate 3.6mW / °C above 70°C ambient temperature.
(Note 5) Device considered a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8
shorted together.
**1.6mm below seating plane.
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Input current, on
IF(ON)
2*
5
mA
Input voltage, off
VF(OFF)
0
0.8
V
Supply voltage
VCC
4.5
20
V
Enable voltage high
VEH
2.0
20
V
Enable voltage low
VEL
0
0.8
V
Fan out(TTL load)
N
4
Operating temperature
Topr
-25
85
°C
*2mA condition permits at least 20% CTR degradation guardband.
Initial switching threshold is 1.6mA or less.


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