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XL0840 データシート(PDF) 4 Page - STMicroelectronics

部品番号 XL0840
部品情報  SENSITIVE GATE 0.8A SCRs
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

XL0840 データシート(HTML) 4 Page - STMicroelectronics

  XL0840 Datasheet HTML 1Page - STMicroelectronics XL0840 Datasheet HTML 2Page - STMicroelectronics XL0840 Datasheet HTML 3Page - STMicroelectronics XL0840 Datasheet HTML 4Page - STMicroelectronics XL0840 Datasheet HTML 5Page - STMicroelectronics  
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XL0840
0
1
2
3
4
5
0.10
1.00
10.00
Rgk(k )
Tj=125°C
VD=270V
dV/dt [Rgk] / dV/dt [Rgk=1k ]
Fig. 6: Relative variation of dV/dt immunity versus
gate-cathode resistance (typical values).
0
1
2
3
4
5
6
7
8
9
10
1.00
10.00
Cgk(nF)
Tj=125°C
VD=270V
Rgk=1kW
dV/dt [Cgk] / dV/dt [Rgk=1k ]
Fig. 7: Relative variation of dV/dt immunity versus
gate-cathode capacitance (typical values).
0
1
2
3
4
5
6
7
8
1
10
100
1000
Number of cycles
Non repetitive
Tj initial=25°C
Repetitive
Tlead=50°C
tp=10ms
ITSM(A)
Fig. 8: Surge peak on-state current versus number
of cycles.
0.1
1.0
10.0
100.0
0.01
0.10
1.00
10.00
tp(ms)
Tj initial=25°C
ITSM
I²t
ITSM(A), I t (A s)
22
Fig. 9: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and cor-
responding value of I
2t.
0.01
0.10
1.00
10.00
01
23
45
6
VTM(V)
Tj=25°C
Tj=125°C
Tj max. :
Vto = 1.00 V
Rd = 600 m
ITM(A)
Fig. 10: On-state characteristics (maximum val-
ues).


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