2SB1561

Transistors

Rev.A

1/3

Medium Power Transistor (−60V, −2A)

2SB1561

Features

1) Low saturation voltage , typically

−50mA.

2) Collector-emitter voltage =

−60V

3) Pc = 2W (on 40

×40×0.7mm ceramic board).

4) Complements the 2SD2391.

External dimensions

(Unit : mm)

MPT3

(1)Base

(2)Collector

(3)Emitter

1.5

0.4

1.6

0.5

3.0

0.4

0.4

1.5

1.5

(3)

(2)

(1)

4.5

Absolute maximum ratings

(Ta=25

°C)

Parameter

Symbol

Tj

Tstg

Limits

−60

−60

−6

−2

0.5

2

150

−55 to +150

Unit

V

V

V

A

−6

A

W

°C

°C

∗1 Single pulse, Pw=10ms

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

∗2 When mounted on a 40 40 0.7mm ceramic board.

Electrical characteristics

(Ta=25

°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Cob

−60

−60

−6

−

−

−

−

−

−

−

−

−

−

−0.15

200

23

−

−

−

−0.1

−0.1

−0.35

−

−

V

V

V

µA

µA

V

MHz

pF

=−50µA

=−1mA

=−50µA

=−50V

=−5V

=−1A/−50mA

−

270

=−2V/−0.5A

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

Output capacitance

120

−

−

−

=−2V/−1.5A

45

−

∗

∗

∗ Measured using pulse current