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74LVC1G373DCKRE4 データシート(PDF) 2 Page - Texas Instruments |
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74LVC1G373DCKRE4 データシート(HTML) 2 Page - Texas Instruments |
2 / 20 page OE 6 1 3 4 LE D C D Q SN74LVC1G373 SCES528D – DECEMBER 2003 – REVISED DECEMBER 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Function Table INPUTS OUTPUT Q OE LE D L H L L L H H H L L X Q0 H X X Z Logic Diagram (Positive Logic) Absolute Maximum Ratings (1) over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT VCC Supply voltage range –0.5 6.5 V VI Input voltage range(2) –0.5 6.5 V VO Voltage range applied to any output in the high-impedance or power-off state (2) (3) –0.5 6.5 V VO Voltage range applied to any output in the high or low state (2) (3) –0.5 VCC + 0.5 V IIK Input clamp current VI < 0 –50 mA IOK Output clamp current VO < 0 –50 mA IO Continuous output current ±50 mA Continuous current through VCC or GND ±100 mA DBV package 165 θJA Package thermal impedance(4) DCK package 259 °C/W YZP package 123 Tstg Storage temperature range –65 150 °C (1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) The input and output negative-voltage ratings may be exceeded if the input and output current ratings are observed. (3) The value of VCC is provided in the recommended operating conditions table. (4) The package thermal impedance is calculated in accordance with JESD 51-7. 2 Submit Documentation Feedback Copyright © 2003–2013, Texas Instruments Incorporated Product Folder Links: SN74LVC1G373 |
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