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MJE8501 データシート(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJE8501 データシート(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 2 isc Silicon NPN Power Transistor MJE8501 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 800 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.33A IC= 1A; IB= 0.33A,TC=100℃ 2.0 3.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 1A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.33A IC= 1A; IB= 0.33A,TC=100℃ 1.5 1.5 V ICEV Collector Cutoff Current VCEV=1400V;VBE(off)=1.5V VCEV=1400V;VBE(off)=1.5V;TC=100℃ 0.25 5.0 mA ICER Collector Cutoff Current VCE= 1400V; RBE= 50Ω,TC= 100℃ 5.0 mA IEBO Emitter Cutoff Current VEB= 7V; IC=0 1.0 mA hFE DC Current Gain IC= 0.5A ; VCE= 5V 7.5 COB Output Capacitance IE= 0; VCB= 10V; ftest=1.0kHz 50 250 pF Switching times;Resistive Load td Delay Time IC= 1A , VCC= 500V, VBE(off)= 5V IB1= 0.33A; tp= 50μs Duty Cycle≤2.0% 45 200 ns tr Rise Time 200 2000 ns ts Storage Time 1000 4000 ns tf Fall Time 500 2000 ns |
同様の部品番号 - MJE8501 |
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同様の説明 - MJE8501 |
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