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CSD15380F3 データシート(PDF) 3 Page - Texas Instruments |
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CSD15380F3 データシート(HTML) 3 Page - Texas Instruments |
3 / 14 page 3 CSD15380F3 www.ti.com SLPS579 – MAY 2016 Product Folder Links: CSD15380F3 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated 5 Specifications 5.1 Electrical Characteristics TA = 25°C (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, IDS = 250 μA 20 V IDSS Drain-to-Source leakage current VGS = 0 V, VDS = 16 V 50 nA IGSS Gate-to-source leakage current VDS = 0 V, VGS = 10 V 25 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, IDS = 2.5 μA 0.85 1.10 1.35 V RDS(on) Drain-to-source on-resistance VGS = 2.5 V, IDS = 0.1 A 2220 4000 m Ω VGS = 4.5 V, IDS = 0.1 A 1170 1460 m Ω VGS = 8 V, IDS = 0.1 A 990 1190 m Ω gfs Transconductance VDS = 2 V, IDS = 0.1 A 0.64 S DYNAMIC CHARACTERISTICS Ciss Input capacitance VGS = 0 V, VDS = 10 V, ƒ = 1 MHz 8.1 10.5 pF Coss Output capacitance 5.9 7.7 pF Crss Reverse transfer capacitance 0.13 0.17 pF RG Series gate resistance 9.6 Ω Qg Gate charge total (4.5 V) VDS = 10 V, IDS = 0.1 A 0.216 0.281 nC Qgd Gate charge gate-to-drain 0.027 nC Qgs Gate charge gate-to-source 0.077 nC Qg(th) Gate charge at Vth 0.048 nC td(on) Turn on delay time VDS = 10 V, VGS = 4.5 V, IDS = 0.1 A, RG = 0 Ω 3 ns tr Rise time 1 ns td(off) Turn off delay time 7 ns tf Fall time 7 ns DIODE CHARACTERISTICS VSD Diode forward voltage ISD = 0.1 A, VGS = 0 V 0.85 1 V (1) Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu. (2) Device mounted on FR4 material with minimum Cu mounting area. 5.2 Thermal Information TA = 25°C (unless otherwise stated) THERMAL METRIC TYPICAL VALUES UNIT RθJA Junction-to-ambient thermal resistance(1) 90 °C/W Junction-to-ambient thermal resistance(2) 255 °C/W |
同様の部品番号 - CSD15380F3 |
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同様の説明 - CSD15380F3 |
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