CSD17484F4_16 datasheet(5/13 Pages) TI1

部品番号	CSD17484F4

部品情報	30 V N-Channel FemtoFET MOSFET

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TC - Case Temperature (GC)

-75

-50

-25

0

25

50

75

100

125

150

175

0.7

0.8

0.9

1

1.1

1.2

1.3

1.4

1.5

D008

VGS = 2.5 V

VGS = 4.5 V

VSD - Source-To-Drain Voltage (V)

0

0.2

0.4

0.6

0.8

1

0.0001

0.001

0.01

0.1

1

10

D009

TC = 25GC

TC = 125GC

TC - Case Temperature (°C)

-75

-50

-25

0

25

50

75

100

125

150

175

0.35

0.45

0.55

0.65

0.75

0.85

0.95

1.05

1.15

D006

VGS - Gate-to-Source Voltage (V)

0

2

4

6

8

10

12

14

16

18

20

50

75

100

125

150

175

200

225

250

D007

TC = 25°C, I D = 0.5 A

TC = 125°C, I D = 0.5 A

Qg - Gate Charge (nC)

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

0

1

2

3

4

5

6

7

8

D004

VDS - Drain-to-Source Voltage (V)

0

3

6

9

12

15

18

21

24

27

30

1

10

100

1000

D005

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

CSD17484F4

www.ti.com

SLPS550 – MAY 2015

Typical MOSFET Characteristics (continued)

(TA = 25°C unless otherwise stated)

ID = 0.5 A

VDS = 15 V

Figure 4. Gate Charge

Figure 5. Capacitance

ID = 250 µA

Figure 6. Threshold Voltage vs Temperature

Figure 7. On-State Resistance vs Gate-to-Source Voltage

ID = 0.5 A

Figure 8. Normalized On-State Resistance vs Temperature

Figure 9. Typical Diode Forward Voltage

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