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CSD18540Q5B データシート(PDF) 3 Page - Texas Instruments |
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CSD18540Q5B データシート(HTML) 3 Page - Texas Instruments |
3 / 13 page 3 CSD18540Q5B www.ti.com SLPS488A – JUNE 2014 – REVISED JUNE 2016 Product Folder Links: CSD18540Q5B Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated 5 Specifications 5.1 Electrical Characteristics TA = 25°C (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 60 V IDSS Drain-to-source leakage current VGS = 0 V, VDS = 48 V 1 μA IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 1.5 1.9 2.3 V RDS(on) Drain-to-source on resistance VGS = 4.5 V, ID = 28 A 2.6 3.3 m Ω VGS = 10 V, ID = 28 A 1.8 2.2 m Ω gfs Transconductance VDS = 6 V, ID = 28 A 116 S DYNAMIC CHARACTERISTICS Ciss Input capacitance VGS = 0 V, VDS = 30 V, ƒ = 1 MHz 3250 4230 pF Coss Output capacitance 622 808 pF Crss Reverse transfer capacitance 15 20 pF RG Series gate resistance 0.8 1.6 Ω Qg Gate charge total (4.5 V) VDS = 30 V, ID = 28 A 20 26 nC Qg Gate charge total (10 V) 41 53 nC Qgd Gate charge gate-to-drain 6.7 nC Qgs Gate charge gate-to-source 8.8 nC Qg(th) Gate charge at Vth 6.3 nC Qoss Output charge VDS = 30 V, VGS = 0 V 83 nC td(on) Turnon delay time VDS = 30 V, VGS = 10 V, IDS = 28 A, RG = 0 Ω 6 ns tr Rise time 9 ns td(off) Turnoff delay time 20 ns tf Fall time 3 ns DIODE CHARACTERISTICS VSD Diode forward voltage ISD = 28 A, VGS = 0 V 0.8 1 V Qrr Reverse recovery charge VDS= 30 V, IF = 28 A, di/dt = 300 A/μs 145 nC trr Reverse recovery time 82 ns (1) RθJC is determined with the device mounted on a 1-in 2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in (3.81-cm × 3.81-cm), 0.06-in (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design. (2) Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu. 5.2 Thermal Information TA = 25°C (unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJC Junction-to-case thermal resistance(1) 0.8 °C/W RθJA Junction-to-ambient thermal resistance(1)(2) 50 |
同様の部品番号 - CSD18540Q5B_16 |
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同様の説明 - CSD18540Q5B_16 |
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