データシートサーチシステム |
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LM117KGMD8 データシート(PDF) 9 Page - Texas Instruments |
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LM117KGMD8 データシート(HTML) 9 Page - Texas Instruments |
9 / 37 page LM117QML, LM117QML-SP www.ti.com SNVS356D – MARCH 2006 – REVISED APRIL 2013 LM117H & LM117WG RH Electrical Characteristics DC Parameters (1) (2) Symbol Parameter Conditions Notes Min Max Unit Sub- groups VI = 4.25V, IL = -5mA 1.2 1.3 V 1, 2, 3 VI = 4.25V, IL = -500mA 1.2 1.3 V 1, 2, 3 VO Output Voltage VI = 41.25V, IL = -5mA 1.2 1.3 V 1, 2, 3 VI = 41.25V, IL = -50mA 1.2 1.3 V 1, 2, 3 4.25V ≤ VI ≤ 41.25V, -9.0 9.0 mV 1 VRLine Line Regulation IL = -5mA -23 23 mV 2,3 VI = 6.25V, -12 12 mV 1, 2, 3 -500mA ≤ IL ≤ -5mA VRLoad Load Regulation VI = 41.25V, -12 12 mV 1, 2, 3 -50mA ≤ IL ≤ -5mA VRTh Thermal Regulation VI = 14.6V, IL = -500mA -12 12 mV 1 VI = 4.25V, IL = -5mA -100 -15 µA 1, 2, 3 IAdj Adjust Pin Current VI = 41.25V, IL = -5mA -100 -15 µA 1, 2, 3 4.25V ≤ VI ≤ 41.25V, ΔIAdj/ Line Adjust Pin Current Change -5.0 5.0 µA 1, 2, 3 IL = -5mA VI = 6.25V, ΔIAdj / Load Adjust Pin Current Change -5.0 5.0 µA 1, 2, 3 -500mA ≤ IL ≤ -5mA VI = 4.25V, -3.0 -0.5 mA 1, 2, 3 Forced VO = 1.4V VI = 14.25V, IQ Minimum Load Current -3.0 -0.5 mA 1, 2, 3 Forced VO = 1.4V VI = 41.25V, -5.0 -1.0 mA 1, 2, 3 Forced VO = 1.4V VI = 4.25V -1.8 -0.5 A 1, 2, 3 IOS Output Short Circuit Current VI = 40V -0.5 -0.05 A 1, 2, 3 VI = 4.25V, RL = 2.5Ω, 1.2 1.3 V 1, 2, 3 CL = 20µF VO (Recov) Output Voltage Recovery VI = 40V, RL = 250Ω 1.2 1.3 V 1, 2, 3 VO Output Voltage VI = 6.25V, IL = -5mA See(3) 1.2 1.3 V 2 VI = 4.25V, RL = 2.5Ω, VStart Voltage Start-Up 1.2 1.3 V 1, 2, 3 CL = 20µF, IL = -500mA (1) Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the "Post Radiation Limits" table. These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters are ensured only for the conditions as specified in Mil-Std-883, Method 1019.5, Condition A. (2) Low dose rate testing has been performed on a wafer-by-wafer basis, per test method 1019 condition D of MIL-STD-883, with no enhanced low dose rate sensitivity (ELDRS) effect. (3) Tested @ TA = 125°C, correlated to TA = 150°C Copyright © 2006–2013, Texas Instruments Incorporated Submit Documentation Feedback 9 Product Folder Links: LM117QML LM117QML-SP |
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