データシートサーチシステム |
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SI9410BDY-T1 データシート(PDF) 3 Page - Vishay Siliconix |
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SI9410BDY-T1 データシート(HTML) 3 Page - Vishay Siliconix |
3 / 5 page Si9410BDY Vishay Siliconix New Product Document Number: 72269 S-31409—Rev. A, 07-Jul-03 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 0 2 4 6 8 10 0 3 6 9 12 15 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss VDS = 15 V ID = 8.1 A ID - Drain Current (A) VGS = 10 V ID = 8.1 A VGS = 10 V Gate Charge On-Resistance vs. Drain Current Qg - Total Gate Charge (nC) Capacitance On-Resistance vs. Junction Temperature TJ - Junction Temperature (_C) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.02 0.04 0.06 0.08 0.10 0 2468 10 TJ = 25_C ID = 8.1 A 30 10 1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) VGS = 4.5 V TJ = 150_C |
同様の部品番号 - SI9410BDY-T1 |
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同様の説明 - SI9410BDY-T1 |
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